TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 1 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? applications 3 - pin sot - 89 p ackage ? repeaters ? bts transceivers ? bts high power amplifiers ? cdma / wcdma / lte ? general purpose wireless product features functional block diagram ? 5 0 - 15 00 mhz ? + 30 dbm p1db at 940mhz ? + 4 9 dbm output ip3 at 940mhz ? 1 9 db gain at 940 mhz ? +5v single supply, 2 20 ma current ? internal rf overdrive protection ? internal dc overvoltage protection ? on chip esd protection ? sot - 89 package rf in gnd rf out gnd 1 2 3 4 general description pin configuration the tqp7m910 5 is a high linearity , high gain 1w driver amplifier in indu stry standard, rohs compliant, sot - 89 surface mount package. this ingap/gaas hbt delivers high performance across 0. 0 5 to 1.5 ghz while achieving +4 9 dbm oip3 and + 30 dbm p1db while only consuming 2 20 ma quiescent current. all devices are 100% rf and dc t ested. the tqp7m910 5 incorporates on - chip features that differentiate it from other products in the market. the amplifier has a dynamic active bias circuit that enable stable operation over bias and temperature variations and can provide a high linearity at back - off operation the tqp7m910 5 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. the device an excellent candidate for transceiver line cards and high power am plifiers in current and next generation multi - carrier 3g / 4g base stations. ordering i nfo rmation part no. description tqp7m910 5 1 w high linearity amplifier TQP7M9105 - pcb900 920 - 960 mhz tuned evb standard t/r size = 1000 pieces on a 7 reel. pin # symbol 1 rf input 3 rf output / vcc 2, 4 ground www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 2 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating storage temperature - 6 5 to 150 c device voltage, v cc + 8 v rf input power cw , 50?, t=25c +30 dbm operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max unit s operating temp . range - 40 +85 c v cc +5 +5.25 v tj (for>10 6 hours mttf ) +170 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: +25 c, + 5 v vcc, 50 sy stem , tuned application circuit parameter conditions min typ max unit s operational frequency range 50 1500 mhz test frequency 9 40 mhz gain 1 9 .4 db input return loss - 1 4 d b out put r eturn loss - 15 db output p1db + 30 d bm output ip3 pou t=+15 dbm/tone, f=1 mhz + 4 9 db m wcdma channel power (1) at - 50 dbc aclr + 20 .5 dbm noise figure 6.3 db v cc + 5 v quiescent current, i cq 2 20 ma thermal resistance (j unction to b ase) 27.3 c/w notes: 1. aclr test set - up: 3gpp wcdma, tm1+ 64 dpch, +5 mhz offset, par = 9.7 db at 0.01% prob. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 3 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? s - parameter data v cc = +5 v, i cq = 220 ma, t = +25 c, unmatched 50 ohm system, calibrated to device leads freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s1 2 (ang) s22 (db) s22 (ang) 0.05 - 1.06 - 178.68 17.88 154.59 - 36.95 1.89 - 3.39 - 171.92 0.1 - 1.08 - 179.98 16.04 154.96 - 37.20 3.77 - 3.00 - 176.29 0.2 - 1.01 179.18 15.20 150.91 - 37.52 7.85 - 2.91 - 179.66 0.4 - 0.75 176.01 14.04 134.55 - 36.48 11.27 - 2.73 176.9 1 0.6 - 0.57 171.34 12.73 120.33 - 35.65 11.92 - 2.52 173.48 0.8 - 0.51 166.55 11.29 108.35 - 35.14 9.35 - 2.51 169.15 1.0 - 0.51 163.55 10.11 98.59 - 34.89 11.74 - 2.50 165.78 1.2 - 0.54 161.26 8.87 90.63 - 34.56 11.00 - 2.52 163.07 1.4 - 0.57 157.96 7.85 82.50 - 34.07 10.99 - 2.61 160.70 1.6 - 0.62 154.88 7.10 75.78 - 33.47 10.29 - 2.57 158.17 1.8 - 0.66 150.04 6.35 67.47 - 33.19 11.13 - 2.66 155.39 2.0 - 0.60 144.26 5.75 59.82 - 32.84 4.95 - 2.64 151.03 2.2 - 0.56 139.27 4.95 51.93 - 32.47 3.98 - 2.59 146.61 2.4 - 0.75 13 5.92 3.91 45.80 - 32.62 1.55 - 2.57 141.55 2.6 - 0.58 132.79 3.16 40.57 - 32.36 2.07 - 2.28 139.39 2.8 - 0.55 132.30 2.52 36.55 - 32.25 2.62 - 2.33 138.20 3.0 - 0.64 129.89 2.01 31.75 - 31.94 0.51 - 2.37 136.78 3.2 - 0.69 126.19 1.69 26.65 - 31.44 1.40 - 2.40 135.83 3.4 - 0.84 121.41 1.48 20.86 - 30.84 - 2.57 - 2.54 133.06 3.6 - 0.93 115.44 1.06 12.97 - 30.84 - 4.71 - 2.68 126.60 3.8 - 0.85 110.18 0.51 5.81 - 30.20 - 10.30 - 2.63 119.65 4.0 - 0.80 106.76 - 0.04 - 0.51 - 30.40 - 11.85 - 2.51 114.02 device characterization data 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) frequency (ghz) gain & max stable gain gain gmax - 1 - 0 . 8 - 0.6 - 0 . 4 - 0 . 2 0 0 . 2 0.4 0 . 6 0.8 1 - 1 - 0 . 75 - 0 . 5 - 0 . 25 0 0.25 0 . 5 0.75 1 output reflection coefficients - 1 - 0 . 8 - 0 . 6 - 0.4 - 0 . 2 0 0.2 0 . 4 0 . 6 0 . 8 1 - 1 - 0.75 - 0 . 5 - 0.25 0 0 . 25 0 . 5 0 . 75 1 input reflection coefficients note: the gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (s(21)]. for a tuned circuit at a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown as the blue trace [gain (max)]. the impedance plots are shown from 0.01 C 6 ghz. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 4 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? notes: 1. see evaluation board pcb information section for pcb material and stack - up. 2. components shown on the silkscreen but not on the schematic are not used. 3. the recommended component values are dependent upon the frequency of operation. 4. all components are of 0603 size unless stated on the schematic. 5. critical component placement location s: distance from u1 pin 1 pad (left ed ge) to r1 (right edge): 100 mils (4.85at 940 mhz ) distance from u1 pin 1 pad (left edge) to c6 (right edge): 270 mils (13.1 at 940 mhz) distance from u1 pin 3 pad (right edge) to c7 (left edge): 40 mils (1.94 at 940 mhz) distance from u1 pin 3 pad (right edge) to l2 (left edge): 120 mils (5.82 at 940 mhz) distance from u1 pin 3 pad (right edge) to c8 (left edge): 260 mils (12.6 at 940 mhz) ref des value description manuf. part number n/a n/a printed circuit board triquint 1080068 u1 n/a TQP7M9105 amplifier, sot - 89 pkg. triquint 1077953 c1 3.3 pf cap., chip, 0603, +/ - 0.1pf, 50v, accu - p avx 06035j3r3abstr c2 100 pf cap., chip, 0603, 5%, 50v, npo/cog various c3 1000pf cap., chip, 0603, 5%, 50v, npo/cog various c4 0.1 uf cap., chip, 0603, 10%, 16v, x7r various c5 1.0 uf cap., chip, 0603, 10%, 10v, x5r various c7 1.5 pf cap., chip, 0603, +/ - 0.05pf, 50v, accu - p avx 06035j1r5abstr c6, c8 4.7 pf cap., chip, 0603, +/ - 0.05pf, 50v, accu - p avx 06035j4r7abstr l1 10 nh inductor, 0805, 5%, coilcraft cs series coilcraft 0805cs - 100xjlb l2 2.2 nh inductor, 0603, +/ - 0.3 nh toko ll1608 - fsl2n2s r1 1 resistor, chip, 0603 , 5%, 1/16w various bill of material application circuit 920 - 96 0 mhz (TQP7M9105 - pcb900) www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 5 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? notes: 1. aclr test set - up: 3gpp wcdma, tm1+64 dpch, par = 9.7 db at 0.01% prob. 17 18 19 20 21 22 0.92 0.93 0.94 0.95 0.96 gain (db) frequency (ghz) gain vs. frequency - 40 c +25 c +85 c - 20 - 15 - 10 - 5 0 0.92 0.93 0.94 0.95 0.96 return loss (db) frequency (ghz) input return loss vs. frequency - 40 c +25 c +85 c - 20 - 15 - 10 - 5 0 0.92 0.93 0.94 0.95 0.96 return loss (db) frequency (ghz) output return loss vs. frequency - 40 c +25 c +85 c - 65 - 60 - 55 - 50 - 45 16 17 18 19 20 21 aclr (dbm) output power (dbm) aclr vs. output power vs. frequency w - cdma 3gpp test model 1+64 dpch par = 9.7db @ 0.01% probability 3.84 mhz bw temp.=+25 o c 920 mhz 940 mhz 960 mhz - 65 - 60 - 55 - 50 - 45 16 17 18 19 20 21 aclr (dbm) output power (dbm) aclr vs. output power at 940mhz w - cdma 3gpp test model 1+64 dpch par = 9.7db @ 0.01% probability 3.84 mhz bw frequency : 940 mhz - 40 c +25 c +85 c 30 35 40 45 50 55 12 13 14 15 16 17 18 oip3 (dbm) output power / tone(dbm) oip3 vs. output power vs. frequency 1mhz tone spacing temp.=+25 o c 920 mhz 940 mhz 960 mhz 30 35 40 45 50 55 12 13 14 15 16 17 18 oip3 (dbm) output power / tone(dbm) oip3 vs. output power at 940mhz 1mhz tone spacing - 40 c +25 c +85 c 28 29 30 31 32 920 930 940 950 960 p1db (dbm) frequency (mhz) p1db vs. temperature +85 c +25 c ?40 c 0 100 200 300 400 500 600 21 23 25 27 29 31 icc (ma) output power (dbm) icc vs. output power temp.=+25 o c frequency : 940 m hz cw signal frequency mhz 920 940 960 gain db 19.4 19.4 19.3 input return loss db - 13 - 14 - 13 output return loss db - 15 - 15 - 14 output p1db dbm +29.9 +30 .0 +29.8 output ip3 (+15 dbm/tone, ?f = 1 mhz) dbm +49.5 +49.2 +49 wcdma channel power (at - 50 dbc aclr) (1) dbm +20.5 +20.5 +20.5 noise figure db 6.4 6. 4 6.3 supply voltage, vcc v +5 quiescent collector current, icq ma 220 rf performance plots 920 - 960 mhz (TQP7M9105 - pcb900) typical performance 920 - 960 mhz (TQP7M9105 - pcb900) www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 6 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? rf in gnd rf out gnd 1 2 3 4 pin symbol description 1 rf in rf input . requires external match for optimal performance. external dc block required. 2, 4 gnd rf/dc ground connection 3 rfout / vcc rf output . requires external match for optimal performance . external dc blo ck and supply voltage is required. triquint pcb 1080068 material and stack - up 50 ohm line dimensions: width = .031, spacing = .035. 1 oz. cu bottom layer nelco n-4000-13 core nelco n-4000-13 r =3.7 typ. 1 oz. cu top layer 1 oz. cu inner layer 1 oz. cu inner layer 0.014" 0.014" 0.062" 0.006" finished board thickness pin configuration a nd description evaluation board pcb information www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 7 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? package marking and dimensions notes: 1. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from supplier to supplier, careful proces s development is recommended. 2. all dimensions are in millimeters [inches]. angles are in degrees. 3. use 1 oz. copper minimum for top and bottom layer metal. 4. vias are required under the backside paddle of this device for proper rf/dc grounding and thermal dissipation. we recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10). 5. ensure good package backside paddle solder attach for reliable operation and best electrical performance. 6. place mount ing screws near the part to fasten a back side heat sink. 7. do not apply solder mask to the back side of the pc board in the heat sink contact region. 8. ensure that the backside via region makes good physical contact with the heat sink. 7m9105 yxxx 3.86 [0.152] 0.64 [0.025] 2x 0.86 [0.034] 0.76 [0.030] 0.63 [0.025] ?.254 (.010) plated thru via holes 1.26 [0.050] 2x 1.27 [0.050] 0.86 [0.034] 2x 0.58 [0.023] 4.50 [0.177] 2.65 [0.104] package outline 3.86 [0.152] 29x 3 pcb mounting pattern mechanical information marking: part number C 7m9105 assembly code - yxxx assembly www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9105 1w high linearity amplifier advanced data sheet: rev b 6/ 1 4 /12 - 8 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info - sales@tqs.com fax: +1.503.615.8902 for technical questions and application information: email: sjcap plications.engineering@tqs.com the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contain ed herein. triquint assumes no responsibility or liability whatsoever for any of the informat ion contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herei n or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triq uint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. esd information esd rating: class 1c value: 1 000 v and < 2 000 v test: human body model (hbm) standard: jedec standard jesd22 - a114 esd rating: class iv value: 200 0 v min test: charged device model (cdm) standard: jedec standard jesd22 - c101 solderability package lead plating: nipda u compatible with both lead - free (260 c max. reflow temperature) and tin/lead (245 c max. reflow temperature) soldering processes. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous s ubstances in electrical and electronic equipment). this product also has the following attributes: x lead free x halogen free (chlorine, bromine) x antimony free x tbbp - a (c 15 h 12 br 4 0 2 ) free x pfos free x svhc free msl rating moisture sensitivity level (msl) 3 at 2 60c convection reflow per jedec standard ipc/jedec j - std - 020. contact information product compliance information important notice www.datasheet.net/ datasheet pdf - http://www..co.kr/
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